BSP51,115
- Mfr.Part #
- BSP51,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 1A SOT223
- Stock
- 8,854
- In Stock :
- 8,854
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 50nA
- Factory Lead Time :
- 4 Weeks
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-261-4, TO-261AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 1.25W
- Surface Mount :
- yes
- Polarity :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 4
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Current - Collector (Ic) (Max) :
- 1A
- Base Part Number :
- BSP51
- Series :
- Automotive, AEC-Q101
- Number of Elements :
- 1
- Frequency - Transition :
- 200MHz
- Number of Terminations :
- 4
- JESD-30 Code :
- R-PDSO-G4
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Published :
- 1996
- Transition Frequency :
- 200MHz
- Terminal Form :
- Gull wing
- Datasheets
- BSP51,115

NPN - Darlington 150°C TJ 50nA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP51,115 Overview
In this device, the DC current gain is 2000 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.3V @ 500μA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
BSP51,115 Features
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
a transition frequency of 200MHz
BSP51,115 Applications
There are a lot of Nexperia USA Inc.
BSP51,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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