BSP51H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

200MHz

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

10μA

Height :

1.6mm

Transistor Type :

NPN - Darlington

Transistor Element Material :

SILICON

Element Configuration :

Single

Number of Elements :

1

Max Collector Current :

1A

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA 10V

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BSP51

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1mA, 1A

Package / Case :

TO-261-4, TO-261AA

Transistor Application :

SWITCHING

Case Connection :

COLLECTOR

Power - Max :

1.5W

Length :

6.5mm

Factory Lead Time :

26 Weeks

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

80V

Collector Emitter Voltage (VCEO) :

1.3V

Emitter Base Voltage (VEBO) :

5V

Operating Temperature :

150°C TJ

Polarity :

NPN

Width :

3.5mm

Packaging :

Tape and Reel (TR)

hFE Min :

1000

Radiation Hardening :

No

Terminal Position :

Dual

Collector Emitter Saturation Voltage :

1.8V

Published :

2008

Transition Frequency :

200MHz

Terminal Form :

Gull wing

Number of Terminations :

4

Max Power Dissipation :

1.5W

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

60V