BSP50
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- Mfr.Part #
- BSP50
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- BSP50 - SMALL SIGNAL BIPOLAR TRA
- Stock
- 4,880
- In Stock ：
- 4,880
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BSP50
- Transistor Type :
- NPN - Darlington
- Width :
- 3.5mm
- Collector Emitter Breakdown Voltage :
- 45V
- Current Rating :
- 800mA
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Terminal Position :
- Dual
- Published :
- 1997
- Lead Free :
- Lead Free
- Number of Pins :
- 4
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Polarity :
- NPN
- Max Collector Current :
- 800mA
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Transition Frequency :
- 200MHz
- Voltage - Rated DC :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 6.5mm
- Height :
- 1.6mm
- Mount :
- Surface Mount
- Weight :
- 188mg
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 50nA
- Number of Terminations :
- 4
- Collector Emitter Saturation Voltage :
- 1.3V
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Max Breakdown Voltage :
- 45V
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 39 Weeks
- hFE Min :
- 2000
- Number of Elements :
- 1
- Package / Case :
- TO-261-4, TO-261AA
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 1W
- Datasheets
- BSP50
NPN - Darlington -55°C~150°C TJ 50nA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP50 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 500mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.3V @ 500μA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
BSP50 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 200MHz
BSP50 Applications
There are a lot of ON Semiconductor
BSP50 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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