BSP50E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA, 10V

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

10μA

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G4

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1mA, 1A

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Power - Max :

1.5 W

Reach Compliance Code :

Unknown

Collector Current-Max (IC) :

1 A

Number of Elements :

1

Manufacturer :

Siemens

Case Connection :

COLLECTOR

Number of Terminals :

4

Collector-Emitter Voltage-Max :

45 V

Terminal Form :

Gull wing

Operating Temperature :

150°C (TJ)

Configuration :

Darlington

Package :

Bulk

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Voltage - Collector Emitter Breakdown (Max) :

45 V

Product Status :

Active

Frequency - Transition :

200MHz

Package / Case :

TO-261-4, TO-261AA

Series :

-

DC Current Gain-Min (hFE) :

2000

Transistor Type :

NPN - Darlington

Supplier Device Package :

PG-SOT223-4

Current - Collector (Ic) (Max) :

1 A