BSP50E6327HTSA1
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- Mfr.Part #
- BSP50E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 45V 1A SOT-223
- Stock
- 4,156
- In Stock ：
- 4,156
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Number of Terminations :
- 4
- Pin Count :
- 4
- Reference Standard :
- AEC-Q101
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1mA, 1A
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 200MHz
- Current - Collector (Ic) (Max) :
- 1A
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Current - Collector Cutoff (Max) :
- 10μA
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Base Part Number :
- BSP50
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Frequency - Transition :
- 200MHz
- Power - Max :
- 1.5W
- JESD-30 Code :
- R-PDSO-G4
- RoHS Status :
- RoHS Compliant
- Published :
- 2011
- Reach Compliance Code :
- Compliant
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Transistor Type :
- NPN - Darlington
- Datasheets
- BSP50E6327HTSA1
NPN - Darlington 150°C TJ 10μA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP50E6327HTSA1 Overview
This device has a DC current gain of 2000 @ 500mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 200MHz.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.
BSP50E6327HTSA1 Features
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
a transition frequency of 200MHz
BSP50E6327HTSA1 Applications
There are a lot of Infineon Technologies
BSP50E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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