BSP52,115
- Mfr.Part #
- BSP52,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A SOT223
- Stock
- 1,601
- In Stock :
- 1,601
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Pin Count :
- 4
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 200MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Polarity :
- NPN
- Number of Terminations :
- 4
- Current - Collector (Ic) (Max) :
- 1A
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Transistor Type :
- NPN - Darlington
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 200MHz
- Package / Case :
- TO-261-4, TO-261AA
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Series :
- Automotive, AEC-Q101
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 1999
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G4
- Qualification Status :
- Not Qualified
- Surface Mount :
- yes
- Factory Lead Time :
- 4 Weeks
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 1.25W
- Terminal Position :
- Dual
- Base Part Number :
- BSP52
- Datasheets
- BSP52,115

NPN - Darlington 150°C TJ 50nA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP52,115 Overview
In this device, the DC current gain is 2000 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.3V @ 500μA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
BSP52,115 Features
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
a transition frequency of 200MHz
BSP52,115 Applications
There are a lot of Nexperia USA Inc.
BSP52,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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