BSC0924NDIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.007Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Number of Terminations :

6

Factory Lead Time :

18 Weeks

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

FET Feature :

Logic Level Gate, 4.5V Drive

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Contact Plating :

Tin

Published :

2013

Reach Compliance Code :

not_compliant

Pbfree Code :

No

Transistor Element Material :

SILICON

Series :

OptiMOS™

Package / Case :

8-PowerTDFN

Input Capacitance (Ciss) (Max) @ Vds :

1160pF @ 15V

Continuous Drain Current (ID) :

32A

FET Type :

2 N-Channel (Dual) Asymmetrical

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN SOURCE

Current - Continuous Drain (Id) @ 25°C :

17A 32A

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

R-PDSO-N6

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Configuration :

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

Max Power Dissipation :

1W

Drain Current-Max (Abs) (ID) :

1.3A

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V