BSC010N04LSATMA1

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Mfr.Part #
BSC010N04LSATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 40V 38A/100A TDSON
Stock
1,192,411
In Stock :
1,192,411

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Cut Tape (CT)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
Flat
Max Junction Temperature (Tj) :
150°C
Power Dissipation :
2.5W
Published :
2003
Mounting Type :
Surface Mount
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Avalanche Energy Rating (Eas) :
330 mJ
JESD-30 Code :
R-PDSO-F3
Continuous Drain Current (ID) :
100A
Package / Case :
8-PowerTDFN
Height :
1.1mm
Number of Pins :
8
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
2.5W Ta 139W Tc
Pulsed Drain Current-Max (IDM) :
400A
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
1m Ω @ 50A, 10V
Number of Channels :
1
Turn On Delay Time :
10 ns
Terminal Finish :
Tin (Sn)
FET Type :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Max Dual Supply Voltage :
40V
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Dual
ECCN Code :
EAR99
Halogen Free :
Halogen Free
Fall Time (Typ) :
9 ns
Threshold Voltage :
1.2V
JESD-609 Code :
e3
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
OptiMOS™
Vgs(th) (Max) @ Id :
2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 20V
Case Connection :
DRAIN
Drain to Source Breakdown Voltage :
40V
Turn-Off Delay Time :
46 ns
Reach Compliance Code :
not_compliant
Lead Free :
Contains Lead
Rise Time :
12ns
Pbfree Code :
No
Transistor Application :
SWITCHING
Factory Lead Time :
39 Weeks
Mount :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
38A Ta 100A Tc
Number of Elements :
1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC010N04LSATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, Number of Pins:8, Number of Channels:1, BSC010N04LSATMA1 pinout, BSC010N04LSATMA1 datasheet PDF, BSC010N04LSATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC010N04LSATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC010N04LSATMA1


N-Channel Cut Tape (CT) 1m Ω @ 50A, 10V ±20V 6800pF @ 20V 95nC @ 10V 8-PowerTDFN

BSC010N04LSATMA1 Description

This BSC010N04LSATMA1 MOSFET operates at 40V and is optimized for synchronous rectifying. With this MOSFET, you get the lowest RDS (on) and the perfect switching behavior for applications that require fast switching.

By using thin wafer technology, we have achieved a 15% lower RDS (on) and a 31% lower Figure of Merit (RDS (on) x Qg) when compared to alternative devices. It is possible to achieve high system efficiency and power density by dramatically reducing gate and output charges. The OptiMOSTM power MOSFET is well suited to high-frequency switching and DC-DC conversion applications.


BSC010N04LSATMA1 Features

  • 100%avalanchetested

  • Superiorthermalresistance

  • N-channel,logic level

  • Optimizedforsychronousrectification

  • Verylowon-resistance(on)

  • QualifiedaccordingtoJEDEC1)for target applications

  • Pb-freeleadplating;RoHS-compliant

  • Halogen-freeaccordingtoIEC61249-2-21

  • Highersolderjointreliabilityduetoenlargedsourceinterconnection


BSC010N04LSATMA1 Applications 

  • Industrial

  • Power Management

  • Alternative Energy

  • Motor Drive & Control


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