BSC010N04LSATMA1

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Mfr.Part #
BSC010N04LSATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 40V 38A/100A TDSON
Stock
1,192,411
In Stock :
1,192,411

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 20V
Gate to Source Voltage (Vgs) :
20V
Package / Case :
8-PowerTDFN
Terminal Finish :
Tin (Sn)
Series :
OptiMOS™
Lead Free :
Contains Lead
Packaging :
Cut Tape (CT)
Mounting Type :
Surface Mount
Threshold Voltage :
1.2V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
1m Ω @ 50A, 10V
Pulsed Drain Current-Max (IDM) :
400A
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Terminal Form :
Flat
Mount :
Surface Mount
Transistor Element Material :
SILICON
Factory Lead Time :
39 Weeks
Pbfree Code :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
46 ns
Vgs (Max) :
±20V
Max Junction Temperature (Tj) :
150°C
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2003
Avalanche Energy Rating (Eas) :
330 mJ
JESD-30 Code :
R-PDSO-F3
Number of Pins :
8
Turn On Delay Time :
10 ns
Max Dual Supply Voltage :
40V
Rise Time :
12ns
Number of Terminations :
3
Reach Compliance Code :
not_compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Current - Continuous Drain (Id) @ 25°C :
38A Ta 100A Tc
Operating Temperature :
-55°C~150°C TJ
Height :
1.1mm
Power Dissipation :
2.5W
Power Dissipation-Max :
2.5W Ta 139W Tc
Fall Time (Typ) :
9 ns
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Number of Elements :
1
Halogen Free :
Halogen Free
Operating Mode :
ENHANCEMENT MODE
Terminal Position :
Dual
Drain to Source Breakdown Voltage :
40V
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
2V @ 250μA
Number of Channels :
1
Case Connection :
DRAIN
Continuous Drain Current (ID) :
100A
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC010N04LSATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Mounting Type:Surface Mount, Number of Pins:8, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, BSC010N04LSATMA1 pinout, BSC010N04LSATMA1 datasheet PDF, BSC010N04LSATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC010N04LSATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC010N04LSATMA1


N-Channel Cut Tape (CT) 1m Ω @ 50A, 10V ±20V 6800pF @ 20V 95nC @ 10V 8-PowerTDFN

BSC010N04LSATMA1 Description

This BSC010N04LSATMA1 MOSFET operates at 40V and is optimized for synchronous rectifying. With this MOSFET, you get the lowest RDS (on) and the perfect switching behavior for applications that require fast switching.

By using thin wafer technology, we have achieved a 15% lower RDS (on) and a 31% lower Figure of Merit (RDS (on) x Qg) when compared to alternative devices. It is possible to achieve high system efficiency and power density by dramatically reducing gate and output charges. The OptiMOSTM power MOSFET is well suited to high-frequency switching and DC-DC conversion applications.


BSC010N04LSATMA1 Features

  • 100%avalanchetested

  • Superiorthermalresistance

  • N-channel,logic level

  • Optimizedforsychronousrectification

  • Verylowon-resistance(on)

  • QualifiedaccordingtoJEDEC1)for target applications

  • Pb-freeleadplating;RoHS-compliant

  • Halogen-freeaccordingtoIEC61249-2-21

  • Highersolderjointreliabilityduetoenlargedsourceinterconnection


BSC010N04LSATMA1 Applications 

  • Industrial

  • Power Management

  • Alternative Energy

  • Motor Drive & Control


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