BSC010N04LSATMA1
- Mfr.Part #
- BSC010N04LSATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 38A/100A TDSON
- Stock
- 1,192,411
- In Stock :
- 1,192,411
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Rise Time :
- 12ns
- Halogen Free :
- Halogen Free
- Power Dissipation-Max :
- 2.5W Ta 139W Tc
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Application :
- SWITCHING
- Terminal Form :
- Flat
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 8
- Packaging :
- Cut Tape (CT)
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Contains Lead
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pulsed Drain Current-Max (IDM) :
- 400A
- Drain to Source Breakdown Voltage :
- 40V
- Continuous Drain Current (ID) :
- 100A
- Rds On (Max) @ Id, Vgs :
- 1m Ω @ 50A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 10 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 38A Ta 100A Tc
- Series :
- OptiMOS™
- Case Connection :
- DRAIN
- Number of Terminations :
- 3
- Threshold Voltage :
- 1.2V
- Fall Time (Typ) :
- 9 ns
- Mount :
- Surface Mount
- Package / Case :
- 8-PowerTDFN
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 330 mJ
- Height :
- 1.1mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PDSO-F3
- Turn-Off Delay Time :
- 46 ns
- Power Dissipation :
- 2.5W
- Published :
- 2003
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- No
- Factory Lead Time :
- 39 Weeks
- Number of Elements :
- 1
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Max Dual Supply Voltage :
- 40V
- Datasheets
- BSC010N04LSATMA1
BSC010N04LSATMA1 Documents

N-Channel Cut Tape (CT) 1m Ω @ 50A, 10V ±20V 6800pF @ 20V 95nC @ 10V 8-PowerTDFN
BSC010N04LSATMA1 Description
This BSC010N04LSATMA1 MOSFET operates at 40V and is optimized for synchronous rectifying. With this MOSFET, you get the lowest RDS (on) and the perfect switching behavior for applications that require fast switching.
By using thin wafer technology, we have achieved a 15% lower RDS (on) and a 31% lower Figure of Merit (RDS (on) x Qg) when compared to alternative devices. It is possible to achieve high system efficiency and power density by dramatically reducing gate and output charges. The OptiMOSTM power MOSFET is well suited to high-frequency switching and DC-DC conversion applications.
BSC010N04LSATMA1 Features
-
100%avalanchetested
-
Superiorthermalresistance
-
N-channel,logic level
-
Optimizedforsychronousrectification
-
Verylowon-resistance(on)
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QualifiedaccordingtoJEDEC1)for target applications
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Pb-freeleadplating;RoHS-compliant
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Halogen-freeaccordingtoIEC61249-2-21
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Highersolderjointreliabilityduetoenlargedsourceinterconnection
BSC010N04LSATMA1 Applications
-
Industrial
-
Power Management
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Alternative Energy
-
Motor Drive & Control
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