BSC010N04LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

330 mJ

Continuous Drain Current (ID) :

100A

Fall Time (Typ) :

9 ns

Transistor Application :

SWITCHING

Factory Lead Time :

39 Weeks

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Published :

2003

Terminal Position :

Dual

Threshold Voltage :

1.2V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

1m Ω @ 50A, 10V

Turn On Delay Time :

10 ns

FET Type :

N-Channel

Power Dissipation :

2.5W

Number of Terminations :

3

Halogen Free :

Halogen Free

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Packaging :

Cut Tape (CT)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn-Off Delay Time :

46 ns

Number of Pins :

8

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

38A Ta 100A Tc

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Drain to Source Breakdown Voltage :

40V

JESD-30 Code :

R-PDSO-F3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 20V

Max Dual Supply Voltage :

40V

Height :

1.1mm

Operating Temperature :

-55°C~150°C TJ

Series :

OptiMOS™

Number of Elements :

1

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Pbfree Code :

No

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

400A

Rise Time :

12ns

Power Dissipation-Max :

2.5W Ta 139W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-PowerTDFN

Lead Free :

Contains Lead