BSC010N04LSATMA1
- Mfr.Part #
- BSC010N04LSATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 38A/100A TDSON
- Stock
- 1,192,411
- In Stock :
- 1,192,411
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- JESD-30 Code :
- R-PDSO-F3
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- not_compliant
- Pulsed Drain Current-Max (IDM) :
- 400A
- Number of Channels :
- 1
- Terminal Position :
- Dual
- Turn On Delay Time :
- 10 ns
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 2.5W Ta 139W Tc
- Pbfree Code :
- No
- Threshold Voltage :
- 1.2V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 46 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Published :
- 2003
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Height :
- 1.1mm
- Rise Time :
- 12ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 20V
- Gate to Source Voltage (Vgs) :
- 20V
- Max Dual Supply Voltage :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 330 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 38A Ta 100A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Form :
- Flat
- Power Dissipation :
- 2.5W
- Halogen Free :
- Halogen Free
- Number of Pins :
- 8
- Drain to Source Breakdown Voltage :
- 40V
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-PowerTDFN
- Factory Lead Time :
- 39 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 9 ns
- Lead Free :
- Contains Lead
- Series :
- OptiMOS™
- Packaging :
- Cut Tape (CT)
- Terminal Finish :
- Tin (Sn)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 100A
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 1m Ω @ 50A, 10V
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Datasheets
- BSC010N04LSATMA1
BSC010N04LSATMA1 Documents

N-Channel Cut Tape (CT) 1m Ω @ 50A, 10V ±20V 6800pF @ 20V 95nC @ 10V 8-PowerTDFN
BSC010N04LSATMA1 Description
This BSC010N04LSATMA1 MOSFET operates at 40V and is optimized for synchronous rectifying. With this MOSFET, you get the lowest RDS (on) and the perfect switching behavior for applications that require fast switching.
By using thin wafer technology, we have achieved a 15% lower RDS (on) and a 31% lower Figure of Merit (RDS (on) x Qg) when compared to alternative devices. It is possible to achieve high system efficiency and power density by dramatically reducing gate and output charges. The OptiMOSTM power MOSFET is well suited to high-frequency switching and DC-DC conversion applications.
BSC010N04LSATMA1 Features
-
100%avalanchetested
-
Superiorthermalresistance
-
N-channel,logic level
-
Optimizedforsychronousrectification
-
Verylowon-resistance(on)
-
QualifiedaccordingtoJEDEC1)for target applications
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Pb-freeleadplating;RoHS-compliant
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Halogen-freeaccordingtoIEC61249-2-21
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Highersolderjointreliabilityduetoenlargedsourceinterconnection
BSC010N04LSATMA1 Applications
-
Industrial
-
Power Management
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Alternative Energy
-
Motor Drive & Control
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