BSC010N04LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerTDFN

JESD-609 Code :

e3

Turn-Off Delay Time :

46 ns

Fall Time (Typ) :

9 ns

Terminal Form :

Flat

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

38A Ta 100A Tc

Pbfree Code :

No

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

40V

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Transistor Element Material :

SILICON

Number of Pins :

8

Rise Time :

12ns

Threshold Voltage :

1.2V

Published :

2003

Number of Channels :

1

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Max Dual Supply Voltage :

40V

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

100A

Halogen Free :

Halogen Free

Number of Terminations :

3

Power Dissipation-Max :

2.5W Ta 139W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

1m Ω @ 50A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Turn On Delay Time :

10 ns

Height :

1.1mm

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

2.5W

Packaging :

Cut Tape (CT)

JESD-30 Code :

R-PDSO-F3

Pulsed Drain Current-Max (IDM) :

400A

Number of Elements :

1

Transistor Application :

SWITCHING

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

330 mJ

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 20V

Factory Lead Time :

39 Weeks

Lead Free :

Contains Lead

RoHS Status :

ROHS3 Compliant