BSC010N04LSATMA1
- Mfr.Part #
- BSC010N04LSATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 38A/100A TDSON
- Stock
- 1,192,411
- In Stock :
- 1,192,411
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2003
- Package / Case :
- 8-PowerTDFN
- Factory Lead Time :
- 39 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 400A
- Height :
- 1.1mm
- Case Connection :
- DRAIN
- Packaging :
- Cut Tape (CT)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 2.5W Ta 139W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Halogen Free :
- Halogen Free
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Pbfree Code :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 38A Ta 100A Tc
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Continuous Drain Current (ID) :
- 100A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Number of Pins :
- 8
- Reach Compliance Code :
- not_compliant
- Drain to Source Breakdown Voltage :
- 40V
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 20V
- Max Dual Supply Voltage :
- 40V
- Terminal Form :
- Flat
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 2.5W
- Number of Elements :
- 1
- Rise Time :
- 12ns
- Threshold Voltage :
- 1.2V
- Rds On (Max) @ Id, Vgs :
- 1m Ω @ 50A, 10V
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 330 mJ
- Series :
- OptiMOS™
- Turn-Off Delay Time :
- 46 ns
- JESD-30 Code :
- R-PDSO-F3
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Contains Lead
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 9 ns
- Terminal Position :
- Dual
- Turn On Delay Time :
- 10 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- BSC010N04LSATMA1
BSC010N04LSATMA1 Documents

N-Channel Cut Tape (CT) 1m Ω @ 50A, 10V ±20V 6800pF @ 20V 95nC @ 10V 8-PowerTDFN
BSC010N04LSATMA1 Description
This BSC010N04LSATMA1 MOSFET operates at 40V and is optimized for synchronous rectifying. With this MOSFET, you get the lowest RDS (on) and the perfect switching behavior for applications that require fast switching.
By using thin wafer technology, we have achieved a 15% lower RDS (on) and a 31% lower Figure of Merit (RDS (on) x Qg) when compared to alternative devices. It is possible to achieve high system efficiency and power density by dramatically reducing gate and output charges. The OptiMOSTM power MOSFET is well suited to high-frequency switching and DC-DC conversion applications.
BSC010N04LSATMA1 Features
-
100%avalanchetested
-
Superiorthermalresistance
-
N-channel,logic level
-
Optimizedforsychronousrectification
-
Verylowon-resistance(on)
-
QualifiedaccordingtoJEDEC1)for target applications
-
Pb-freeleadplating;RoHS-compliant
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Halogen-freeaccordingtoIEC61249-2-21
-
Highersolderjointreliabilityduetoenlargedsourceinterconnection
BSC010N04LSATMA1 Applications
-
Industrial
-
Power Management
-
Alternative Energy
-
Motor Drive & Control
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