BSC009NE2LS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

41A Ta 100A Tc

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Pbfree Code :

yes

Case Connection :

DRAIN

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-F5

Published :

2013

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

25V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Contains Lead

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

2.5W Ta 74W Tc

Transistor Element Material :

SILICON

Factory Lead Time :

26 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

10 ns

Pulsed Drain Current-Max (IDM) :

400A

Vgs (Max) :

±16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

41A

Fall Time (Typ) :

19 ns

Series :

OptiMOS™

Number of Terminations :

5

Package / Case :

8-PowerTDFN

Turn-Off Delay Time :

48 ns

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

100A

Avalanche Energy Rating (Eas) :

90 mJ

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 12V

Drain-source On Resistance-Max :

0.00125Ohm

Rise Time :

33ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

0.9m Ω @ 30A, 10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 250μA