BSC009NE2LS5ATMA1

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Mfr.Part #
BSC009NE2LS5ATMA1
Manufacturer
Infineon Technologies
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 25V 41A/100A TDSON
Stock
6,467
In Stock :
6,467

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.00125Ohm
Halogen Free :
Halogen Free
Series :
OptiMOS™
Max Dual Supply Voltage :
25V
Gate to Source Voltage (Vgs) :
20V
Drain Current-Max (Abs) (ID) :
41A
Number of Elements :
1
Number of Pins :
8
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 12V
Fall Time (Typ) :
19 ns
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
41A Ta 100A Tc
RoHS Status :
ROHS3 Compliant
Package / Case :
8-PowerTDFN
Turn On Delay Time :
10 ns
Mount :
Surface Mount
Lead Free :
Contains Lead
Rds On (Max) @ Id, Vgs :
0.9m Ω @ 30A, 10V
Power Dissipation-Max :
2.5W Ta 74W Tc
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
JESD-30 Code :
R-PDSO-F5
Factory Lead Time :
26 Weeks
Vgs(th) (Max) @ Id :
2V @ 250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Configuration :
SINGLE WITH BUILT-IN DIODE
Turn-Off Delay Time :
48 ns
Pulsed Drain Current-Max (IDM) :
400A
Gate Charge (Qg) (Max) @ Vgs :
57nC @ 10V
Continuous Drain Current (ID) :
100A
Packaging :
Tape and Reel (TR)
Terminal Form :
Flat
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Published :
2013
Rise Time :
33ns
Vgs (Max) :
±16V
Avalanche Energy Rating (Eas) :
90 mJ
Transistor Element Material :
SILICON
Reach Compliance Code :
not_compliant
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Dual
FET Type :
N-Channel
Number of Terminations :
5
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSC009NE2LS5ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Package / Case:8-PowerTDFN, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, BSC009NE2LS5ATMA1 pinout, BSC009NE2LS5ATMA1 datasheet PDF, BSC009NE2LS5ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSC009NE2LS5ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSC009NE2LS5ATMA1


N-Channel Tape & Reel (TR) 0.9m Ω @ 30A, 10V ±16V 3900pF @ 12V 57nC @ 10V 8-PowerTDFN

BSC009NE2LS5ATMA1 Description


BSC009NE2LS5ATMA1 is a 25V OptiMOSTM5 Power-MOSFET. The Infineon BSC009NE2LS5ATMA1 can be applied in Desktop and server, Single-phase and multiphase POL, CPU/GPU VR in notebooks, High power density voltage regulator, Or-ing, and E-fuse. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor BSC009NE2LS5ATMA1 is in the TDSON-8 package with 74W power dissipation. 



BSC009NE2LS5ATMA1 Features


  • Best-in-class on-state resistance

  • Benchmark switching performance (lowest figure of merits Ron x Qg and Ron x Qgd)

  • RoHS compliant and halogen-free

  • Optimized EMI behavior (integrated damping network)

  • Highest efficiency

  • Highest power density with S3O8 or Power Block package



BSC009NE2LS5ATMA1 Applications


  • Desktop and server

  • Single-phase and multiphase POL

  • CPU/GPU VR in notebooks

  • High power density voltage regulator

  • Or-ing

  • E-fuse


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