BSC009NE2LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.5W

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Turn On Delay Time :

10 ns

Pin Count :

8

Rise Time :

33ns

Number of Pins :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Factory Lead Time :

26 Weeks

Power Dissipation-Max :

2.5W Ta 96W Tc

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

JESD-30 Code :

R-PDSO-F5

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

126nC @ 10V

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 12V

Transistor Application :

SWITCHING

Max Dual Supply Voltage :

25V

Vgs (Max) :

±20V

Halogen Free :

Halogen Free

Package / Case :

8-PowerTDFN

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

41A

Fall Time (Typ) :

19 ns

Number of Elements :

1

Reach Compliance Code :

not_compliant

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Current - Continuous Drain (Id) @ 25°C :

41A Ta 100A Tc

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

5

Rds On (Max) @ Id, Vgs :

0.9m Ω @ 30A, 10V

Pbfree Code :

No

Case Connection :

DRAIN

JESD-609 Code :

e3

Turn-Off Delay Time :

48 ns

Mounting Type :

Surface Mount

ECCN Code :

EAR99