BSC009NE2LSATMA1
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- Mfr.Part #
- BSC009NE2LSATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 41A/100A TDSON
- Stock
- 35,086
- In Stock ：
- 35,086
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Contains Lead
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Halogen Free :
- Halogen Free
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-PowerTDFN
- Reach Compliance Code :
- not_compliant
- Max Dual Supply Voltage :
- 25V
- Continuous Drain Current (ID) :
- 41A
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 2.5W
- Terminal Form :
- Flat
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 41A Ta 100A Tc
- Number of Pins :
- 8
- Terminal Position :
- Dual
- JESD-30 Code :
- R-PDSO-F5
- Turn-Off Delay Time :
- 48 ns
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 126nC @ 10V
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Factory Lead Time :
- 26 Weeks
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 5
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Fall Time (Typ) :
- 19 ns
- Rds On (Max) @ Id, Vgs :
- 0.9m Ω @ 30A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 12V
- Power Dissipation-Max :
- 2.5W Ta 96W Tc
- Turn On Delay Time :
- 10 ns
- Rise Time :
- 33ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2012
- Pin Count :
- 8
- Series :
- OptiMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Pbfree Code :
- No
- Datasheets
- BSC009NE2LSATMA1
N-Channel Tape & Reel (TR) 0.9m Ω @ 30A, 10V ±20V 5800pF @ 12V 126nC @ 10V 8-PowerTDFN
BSC009NE2LSATMA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5800pF @ 12V.This device conducts a continuous drain current (ID) of 41A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 25V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
BSC009NE2LSATMA1 Features
a continuous drain current (ID) of 41A
the turn-off delay time is 48 ns
BSC009NE2LSATMA1 Applications
There are a lot of Infineon Technologies
BSC009NE2LSATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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