BSC010N04LSTATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Terminal Form :

Flat

Pulsed Drain Current-Max (IDM) :

400A

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

38A

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

133nC @ 10V

Series :

OptiMOS™

Factory Lead Time :

39 Weeks

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Position :

Dual

Package / Case :

8-PowerTDFN

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

39A Ta 100A Tc

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

40V

Drain-source On Resistance-Max :

0.0013Ohm

Drain to Source Voltage (Vdss) :

40V

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

FET Type :

N-Channel

Transistor Application :

SWITCHING

Number of Elements :

1

Avalanche Energy Rating (Eas) :

330 mJ

Power Dissipation-Max :

3W Ta 167W Tc

Input Capacitance (Ciss) (Max) @ Vds :

9520pF @ 20V

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

1m Ω @ 50A, 10V

JESD-30 Code :

R-PDSO-F3

Mounting Type :

Surface Mount