BSC007N04LS6ATMA1
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- Mfr.Part #
- BSC007N04LS6ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 100A TDSON-8-6
- Stock
- 95
- In Stock ：
- 95
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.3V @ 250μA
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 94nC @ 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 0.7m Ω @ 50A, 10V
- Drain to Source Voltage (Vdss) :
- 40V
- Factory Lead Time :
- 26 Weeks
- Series :
- OptiMOS™
- Input Capacitance (Ciss) (Max) @ Vds :
- 8400pF @ 20V
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- 8-PowerTDFN
- Current - Continuous Drain (Id) @ 25°C :
- 100A
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 188W
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BSC007N04LS6ATMA1
N-Channel Tape & Reel (TR) 0.7m Ω @ 50A, 10V ±20V 8400pF @ 20V 94nC @ 4.5V 40V 8-PowerTDFN
BSC007N04LS6ATMA1 Description
The BSC007N04LS6ATMA1 is a power MOSFET with an N-channel configuration. This groundbreaking Power MOSFET combines a vertical structure with the company's strip layout to deliver one of the world's lowest on-resistance and gate charge. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.
BSC007N04LS6ATMA1 Features
?Optimizedforsynchronousapplication
?Verylowon-resistanceRDS(on)
?Avalanche-proofed to the nth degree
?Superiorthermalresistance
?N-channel
?Pb-freeleadplating;RoHScompliant
?Halogen-freeaccordingtoIEC61249-2-21
?175°Crated
BSC007N04LS6ATMA1 Applications
Switching applications
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