BSC010NE2LSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

2.5W Ta 96W Tc

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1mOhm @ 30A, 10V

Max Operating Temperature :

150°C

Current - Continuous Drain (Id) @ 25°C :

39A Ta 100A Tc

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 12V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Rise Time :

6ns

Series :

OptiMOS™

Power Dissipation :

96W

Supplier Device Package :

PG-TDSON-8-7

Drain to Source Resistance :

800μOhm

Drain to Source Voltage (Vdss) :

25V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Min Operating Temperature :

-55°C

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Continuous Drain Current (ID) :

39A

Package / Case :

8-PowerTDFN

Published :

2012

Factory Lead Time :

26 Weeks