BSC009NE2LS5IATMA1
- Mfr.Part #
- BSC009NE2LS5IATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 40A/100A TDSON
- Stock
- 17,403
- In Stock :
- 17,403
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Power Dissipation-Max :
- 2.5W Ta 74W Tc
- Rise Time :
- 33ns
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Number of Elements :
- 1
- Published :
- 2013
- Package / Case :
- 8-PowerTDFN
- Max Dual Supply Voltage :
- 25V
- JESD-30 Code :
- R-PDSO-F5
- Halogen Free :
- Halogen Free
- Vgs (Max) :
- ±16V
- Series :
- OptiMOS™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 40A
- Current - Continuous Drain (Id) @ 25°C :
- 40A Ta 100A Tc
- Height :
- 1.1mm
- Drain to Source Breakdown Voltage :
- 25V
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 27 ns
- Number of Pins :
- 8
- Number of Terminations :
- 5
- Gate Charge (Qg) (Max) @ Vgs :
- 49nC @ 10V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 16V
- Pulsed Drain Current-Max (IDM) :
- 400A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Reach Compliance Code :
- not_compliant
- Max Junction Temperature (Tj) :
- 150°C
- Power Dissipation :
- 2.5W
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Lead Free :
- Contains Lead
- Terminal Form :
- Flat
- Input Capacitance (Ciss) (Max) @ Vds :
- 3200pF @ 12V
- Turn On Delay Time :
- 5 ns
- Factory Lead Time :
- 26 Weeks
- Case Connection :
- DRAIN
- Number of Channels :
- 1
- Fall Time (Typ) :
- 19 ns
- Rds On (Max) @ Id, Vgs :
- 0.95m Ω @ 30A, 10V
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BSC009NE2LS5IATMA1
BSC009NE2LS5IATMA1 Documents

N-Channel Tape & Reel (TR) 0.95m Ω @ 30A, 10V ±16V 3200pF @ 12V 49nC @ 10V 8-PowerTDFN
BSC009NE2LS5IATMA1 Description
BSC009NE2LS5IATMA1 MOSFETs are appropriate for various applications. BSC009NE2LS5IATMA1 MOSFET low gate charge minimizes switching losses, without compromising conduction losses. BSC009NE2LS5IATMA1 Infineon Technologies is suitable for Single-phase and multiphase POL, CPU/GPU VR in notebooks, High power density voltage regulator, Or-ing, and E-fuse.
BSC009NE2LS5IATMA1 Features
Higher power density designs
Reduction of overall system costs
Reduced parts count
Highest efficiency
Operation at high-switching frequency
BSC009NE2LS5IATMA1 Applications
Single-phase and multiphase POL
CPU/GPU VR in notebooks
High power density voltage regulator
Or-ing
E-fuse
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