BSC0923NDIATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Number of Pins :

8

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

ECCN Code :

EAR99

Number of Elements :

2

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

32A

Factory Lead Time :

18 Weeks

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2.5W

Input Capacitance (Ciss) (Max) @ Vds :

1160pF @ 15V

Package / Case :

8-PowerTDFN

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual) Asymmetrical

Series :

OptiMOS™

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate, 4.5V Drive

Current - Continuous Drain (Id) @ 25°C :

17A 32A

Max Power Dissipation :

1W