BFR93AWE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

JESD-30 Code :

R-PDSO-G3

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

NPN

Number of Terminations :

3

Published :

2011

ECCN Code :

EAR99

Collector-Base Capacitance-Max :

0.9pF

Noise Figure (dB Typ @ f) :

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

JESD-609 Code :

e3

Highest Frequency Band :

L B

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BFR93

Gain :

10.5dB ~ 15.5dB

Frequency - Transition :

6GHz

Transistor Type :

NPN

Power Dissipation-Max (Abs) :

0.3W

Package / Case :

SC-70, SOT-323

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Power - Max :

300mW

Terminal Position :

Dual

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C TJ

Transition Frequency :

6000MHz

Current - Collector (Ic) (Max) :

90mA

Terminal Form :

Gull wing

Surface Mount :

yes

Terminal Finish :

MATTE TIN

Configuration :

Single