BFP196WNH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

AMPLIFIER

Gain :

9.7dB

JESD-609 Code :

e3

HTS Code :

8541.21.00.75

Terminal Position :

Dual

Transistor Type :

NPN

Terminal Form :

Gull wing

Number of Terminations :

4

JESD-30 Code :

R-PDSO-G4

Transition Frequency :

7500MHz

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

NPN

Operating Temperature :

150°C TJ

Voltage - Collector Emitter Breakdown (Max) :

12V

Power - Max :

700mW

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 8V

Published :

2003

Packaging :

Tape and Reel (TR)

Noise Figure (dB Typ @ f) :

1.3dB @ 900MHz

RoHS Status :

ROHS3 Compliant

Current - Collector (Ic) (Max) :

150mA

Factory Lead Time :

4 Weeks

Number of Elements :

1

ECCN Code :

EAR99

Highest Frequency Band :

S B

Frequency - Transition :

7.5GHz

Package / Case :

SC-82A, SOT-343