BFP182WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Form :

Gull wing

Height :

800μm

Collector Emitter Voltage (VCEO) :

12V

Collector-Base Capacitance-Max :

0.5pF

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA 8V

hFE Min :

70

Operating Temperature :

150°C TJ

Gain :

22dB

Frequency :

8GHz

Published :

2007

Element Configuration :

Single

Transistor Application :

AMPLIFIER

Max Power Dissipation :

250mW

Number of Elements :

1

Transition Frequency :

8000MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

35mA

JESD-609 Code :

e3

Number of Pins :

4

Factory Lead Time :

4 Weeks

Lead Free :

Lead Free

Transistor Type :

NPN

Base Part Number :

BFP182

Package / Case :

SC-82A, SOT-343

Mount :

Surface Mount

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

12V

Width :

1.25mm

Mounting Type :

Surface Mount

Length :

2mm

Halogen Free :

Halogen Free

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Max Collector Current :

35mA

Power Dissipation :

250mW

Terminal Position :

Dual

Number of Terminations :

4

Collector Base Voltage (VCBO) :

20V

Emitter Base Voltage (VEBO) :

2V

Transistor Element Material :

SILICON

Radiation Hardening :

No