BFP182WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Mount :

Surface Mount

RoHS :

Compliant

Case Connection :

COLLECTOR

Voltage - Collector Emitter Breakdown (Max) :

12V

Gain :

22 dB

Mounting Type :

Surface Mount

Product Status :

Active

Collector-Emitter Voltage-Max :

12 V

Series :

-

Max Breakdown Voltage :

12 V

Current Rating :

35 mA

Operating Temperature :

150°C (TJ)

Collector Current-Max (IC) :

0.035 A

Transition Frequency :

8 GHz

Power - Max :

250mW

Polarity/Channel Type :

NPN

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Max Operating Temperature :

150 °C

Number of Pins :

4

Lead Free :

Lead Free

Supplier Device Package :

PG-SOT343-4

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PDSO-G4

Continuous Collector Current :

35 mA

Terminal Position :

Dual

Collector Emitter Breakdown Voltage :

12 V

Min Operating Temperature :

-65 °C

Max Collector Current :

35 mA

Package / Case :

SC-82A, SOT-343

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Gain Bandwidth Product :

8 GHz

Max Power Dissipation :

250 mW

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

2 V

Configuration :

Single

Power Dissipation :

250 mW

Transistor Element Material :

SILICON

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 10mA, 8V

Polarity :

NPN

Number of Elements :

1

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

Highest Frequency Band :

ULTRA HIGH FREQUENCY BAND

Collector Emitter Voltage (VCEO) :

12 V

Collector-Base Capacitance-Max :

0.45 pF

Manufacturer :

Rochester Electronics LLC

Max Frequency :

8 GHz

Frequency - Transition :

8GHz

Frequency :

8 GHz

Number of Terminals :

4

Package Shape :

RECTANGULAR

Voltage Rating (DC) :

12 V

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

35mA

Terminal Form :

Gull wing

Package :

Bulk