BFP183WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Terminal Finish :

MATTE TIN

Collector-Base Capacitance-Max :

0.6 pF

JESD-30 Code :

R-PDSO-G4

Voltage - Collector Emitter Breakdown (Max) :

12V

Qualification Status :

COMMERCIAL

Package :

Bulk

Number of Elements :

1

Frequency - Transition :

8GHz

Current - Collector (Ic) (Max) :

65mA

Pbfree Code :

yes

Supplier Device Package :

PG-SOT343-4

Series :

-

Product Status :

Active

Collector Current-Max (IC) :

0.065 A

Transistor Type :

NPN

Operating Temperature :

150°C (TJ)

Number of Terminals :

4

Gain :

22dB

Mounting Type :

Surface Mount

Power - Max :

450mW

Collector-Emitter Voltage-Max :

12 V

Terminal Form :

Gull wing

Reach Compliance Code :

Unknown

Package Shape :

RECTANGULAR

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Configuration :

Single

Manufacturer :

Rochester Electronics LLC

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA, 8V

Package / Case :

SC-82A, SOT-343

Case Connection :

COLLECTOR

Surface Mount :

yes

Terminal Position :

Dual

JESD-609 Code :

e3

Highest Frequency Band :

ULTRA HIGH FREQUENCY BAND