BFP183WH6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

12V

Collector Emitter Breakdown Voltage :

12V

Number of Pins :

4

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

20V

Mount :

Surface Mount

Number of Elements :

1

Power Dissipation :

450mW

Transistor Element Material :

SILICON

Max Power Dissipation :

450mW

Length :

2mm

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Factory Lead Time :

4 Weeks

Package / Case :

SC-82A, SOT-343

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Contact Plating :

Tin

Base Part Number :

BFP183

Max Collector Current :

65mA

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Frequency - Transition :

8.5GHz

Width :

1.25mm

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA 8V

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Frequency :

8GHz

Terminal Position :

Dual

Gain :

22dB

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

2V

Transition Frequency :

8000MHz

Published :

2014

Height :

900μm

Number of Terminations :

4

Max Breakdown Voltage :

12V

JESD-609 Code :

e3