BFP183WH6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

ECCN Code :

EAR99

Published :

2014

Collector Base Voltage (VCBO) :

20V

Transistor Element Material :

SILICON

Number of Terminations :

4

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Power Dissipation :

450mW

Radiation Hardening :

No

Width :

1.25mm

Transition Frequency :

8000MHz

Transistor Type :

NPN

Polarity/Channel Type :

NPN

Max Collector Current :

65mA

Package / Case :

SC-82A, SOT-343

Gain :

22dB

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

12V

Mount :

Surface Mount

Number of Elements :

1

Frequency - Transition :

8.5GHz

Collector Emitter Voltage (VCEO) :

12V

Element Configuration :

Single

Halogen Free :

Halogen Free

Emitter Base Voltage (VEBO) :

2V

Number of Pins :

4

Terminal Form :

Gull wing

Terminal Position :

Dual

Factory Lead Time :

4 Weeks

Contact Plating :

Tin

Base Part Number :

BFP183

Max Power Dissipation :

450mW

Height :

900μm

Frequency :

8GHz

Lead Free :

Lead Free

Max Breakdown Voltage :

12V

Mounting Type :

Surface Mount

Length :

2mm

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA 8V