BFP196WE6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Base Part Number :

BFP196

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 8V

Collector Emitter Breakdown Voltage :

12V

Case Connection :

COLLECTOR

Configuration :

Single

Number of Terminations :

4

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

7500MHz

Qualification Status :

Not Qualified

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

Number of Elements :

1

Max Collector Current :

150mA

Max Breakdown Voltage :

12V

Collector Emitter Voltage (VCEO) :

12V

Frequency - Transition :

7.5GHz

Highest Frequency Band :

L B

Terminal Form :

Gull wing

Max Power Dissipation :

700mW

RoHS Status :

RoHS Compliant

Package / Case :

SC-82A, SOT-343

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

20V

Number of Pins :

4

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

700mW

Gain :

12.5dB ~ 19dB

Published :

2011

ECCN Code :

EAR99