BFP196WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

Frequency - Transition :

7.5GHz

Collector-Base Capacitance-Max :

1.4 pF

Reach Compliance Code :

Unknown

Number of Terminals :

4

Pbfree Code :

yes

Transistor Polarity :

NPN

JESD-30 Code :

R-PDSO-G4

Power - Max :

700mW

Product Status :

Active

Supplier Device Package :

PG-SOT343-4

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Gain :

12.5dB ~ 19dB

Peak Reflow Temperature (Cel) :

260

Highest Frequency Band :

L BAND

Current - Collector (Ic) (Max) :

150mA

Series :

-

JESD-609 Code :

e3

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

Continuous Collector Current :

150

Terminal Position :

Dual

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Collector Current-Max (IC) :

0.1 A

Operating Temperature :

150°C (TJ)

Terminal Form :

Gull wing

Configuration :

Single

Voltage - Collector Emitter Breakdown (Max) :

12V

Surface Mount :

yes

Number of Elements :

1

Package :

Bulk

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA, 8V

Transistor Application :

AMPLIFIER

Package Shape :

RECTANGULAR

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Collector-Emitter Voltage-Max :

12 V

Manufacturer :

Rochester Electronics LLC

Package / Case :

SC-82A, SOT-343