BFP196E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Voltage - Rated DC :

12V

Transition Frequency :

7500MHz

Radiation Hardening :

No

Transistor Type :

NPN

Number of Elements :

1

Number of Terminations :

4

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Base Part Number :

BFP196

Package / Case :

TO-253-4, TO-253AA

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 8V

Terminal Form :

Gull wing

Gain :

10.5dB ~ 16.5dB

Pbfree Code :

yes

Mount :

Surface Mount

Halogen Free :

Not Halogen Free

Number of Pins :

4

Emitter Base Voltage (VEBO) :

2V

Max Power Dissipation :

700mW

Noise Figure (dB Typ @ f) :

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

Current Rating :

100mA

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

12V

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

20V

Factory Lead Time :

4 Weeks

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Published :

2013

Frequency :

7.5GHz

Terminal Position :

Dual

ECCN Code :

EAR99

Power Dissipation :

700mW

Max Breakdown Voltage :

12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

12V

Max Collector Current :

150mA

Polarity/Channel Type :

NPN

Configuration :

Single

Transistor Application :

AMPLIFIER