BFP193WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Pins :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Mounting Type :

Surface Mount

Frequency :

8GHz

Emitter Base Voltage (VEBO) :

2V

JESD-609 Code :

e3

Max Power Dissipation :

580mW

Radiation Hardening :

No

Number of Terminations :

3

Collector Base Voltage (VCBO) :

20V

JESD-30 Code :

R-PDSO-G3

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Max Breakdown Voltage :

12V

Collector Emitter Breakdown Voltage :

12V

Gain :

13.5dB ~ 20.5dB

Mount :

Surface Mount

Power Dissipation :

580mW

Package / Case :

SC-82A, SOT-343

hFE Min :

50

Operating Temperature :

150°C TJ

Current - Collector (Ic) (Max) :

80mA

Transition Frequency :

8000MHz

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

REACH SVHC :

Unknown

Max Collector Current :

50mA

Base Part Number :

BFP193

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Contact Plating :

Tin

Published :

2014

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Configuration :

Single

Transistor Type :

NPN

Test Frequency :

900MHz

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

12V

Termination :

SMD/SMT

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Factory Lead Time :

4 Weeks

Terminal Position :

Dual