BFP193WE6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Polarity/Channel Type :

NPN

Frequency - Transition :

8GHz

Terminal Position :

Dual

Number of Elements :

1

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Transistor Type :

NPN

Reach Compliance Code :

Unknown

Highest Frequency Band :

L B

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G4

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Max Breakdown Voltage :

12V

Max Collector Current :

80mA

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

COLLECTOR

Power - Max :

580mW

Transition Frequency :

8000MHz

Collector Emitter Breakdown Voltage :

12V

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Number of Terminations :

4

Published :

2011

Mount :

Surface Mount

Gain :

13.5dB ~ 20.5dB

Collector-Base Capacitance-Max :

0.9pF

Package / Case :

SC-82A, SOT-343

Max Power Dissipation :

580mW

Mounting Type :

Surface Mount

Base Part Number :

BFP193

Operating Temperature :

150°C TJ

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Terminal Form :

Gull wing

Configuration :

Single