BFP193E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

80mA

Packaging :

Tape and Reel (TR)

Width :

1.3mm

Collector-Base Capacitance-Max :

0.9pF

Frequency :

8GHz

Current Rating :

80mA

ECCN Code :

EAR99

Transistor Type :

NPN

Collector Emitter Voltage (VCEO) :

12V

Configuration :

Single

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

2V

Number of Pins :

4

RoHS Status :

ROHS3 Compliant

Base Part Number :

BFP193

Published :

2013

Factory Lead Time :

4 Weeks

Voltage - Rated DC :

12V

Max Collector Current :

80mA

Collector Base Voltage (VCBO) :

20V

Package / Case :

TO-253-4, TO-253AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Gain :

12dB ~ 18dB

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Case Connection :

COLLECTOR

Qualification Status :

Not Qualified

Height :

1mm

Power Dissipation :

580mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Transition Frequency :

8000MHz

Pbfree Code :

yes

Number of Terminations :

4

JESD-609 Code :

e3

Number of Elements :

1

Contact Plating :

Tin

Transistor Application :

AMPLIFIER

Max Power Dissipation :

580mW

Lead Free :

Lead Free

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Terminal Position :

Dual

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Length :

2.9mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Halogen Free :

Not Halogen Free