BFP193E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

2V

Operating Temperature :

150°C TJ

Power Dissipation :

580mW

Transition Frequency :

8000MHz

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

NPN

Published :

2013

Number of Terminations :

4

Terminal Position :

Dual

Mount :

Surface Mount

REACH SVHC :

No SVHC

Base Part Number :

BFP193

Voltage - Rated DC :

12V

Current Rating :

80mA

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Number of Elements :

1

Configuration :

Single

Mounting Type :

Surface Mount

Contact Plating :

Tin

Noise Figure (dB Typ @ f) :

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

Collector-Base Capacitance-Max :

0.9pF

Collector Base Voltage (VCBO) :

20V

Packaging :

Tape and Reel (TR)

Max Collector Current :

80mA

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 30mA 8V

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

12V

Length :

2.9mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

1.3mm

ECCN Code :

EAR99

Max Power Dissipation :

580mW

Number of Pins :

4

Gain :

12dB ~ 18dB

Height :

1mm

Frequency :

8GHz

Pbfree Code :

yes

Current - Collector (Ic) (Max) :

80mA

Package / Case :

TO-253-4, TO-253AA

Halogen Free :

Not Halogen Free

Factory Lead Time :

4 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Case Connection :

COLLECTOR