BDX54CTU

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Mfr.Part #
BDX54CTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 100V 8A TO220-3
Stock
638
In Stock :
638

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pbfree Code :
yes
JESD-609 Code :
e3
Lead Free :
Lead Free
Operating Temperature :
150°C TJ
Package / Case :
TO-220-3
Voltage - Rated DC :
-100V
Lifecycle Status :
LIFETIME (Last Updated: 2 days ago)
Factory Lead Time :
6 Weeks
Height :
9.4mm
Continuous Collector Current :
-8A
Max Collector Current :
-8A
Base Part Number :
BDX54
Length :
10.1mm
Terminal Finish :
Tin (Sn)
Mount :
Through Hole
Transistor Type :
PNP - Darlington
Collector Emitter Breakdown Voltage :
100V
ECCN Code :
EAR99
Width :
4.7mm
Collector Base Voltage (VCBO) :
-100V
Mounting Type :
Through Hole
Published :
2000
Transition Frequency :
20MHz
Element Configuration :
Single
Transistor Application :
SWITCHING
Emitter Base Voltage (VEBO) :
-5V
Current - Collector (Ic) (Max) :
8A
Packaging :
Tube
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Polarity :
PNP
Collector Emitter Saturation Voltage :
2V
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
100V
Weight :
1.8g
Radiation Hardening :
No
Vce Saturation (Max) @ Ib, Ic :
2V @ 12mA, 3A
Number of Terminations :
3
Max Power Dissipation :
60W
Current - Collector Cutoff (Max) :
500μA
hFE Min :
750
JEDEC-95 Code :
TO-220AB
Transistor Element Material :
SILICON
Current Rating :
-8A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Datasheets
BDX54CTU
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX54CTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-220-3, Base Part Number:BDX54, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, BDX54CTU pinout, BDX54CTU datasheet PDF, BDX54CTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX54CTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX54CTU


PNP - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX54CTU Overview


This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2V @ 12mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -8A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 20MHz.A maximum collector current of -8A volts is possible.

BDX54CTU Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 20MHz


BDX54CTU Applications


There are a lot of ON Semiconductor
BDX54CTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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