BDX53B

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Mfr.Part #
BDX53B
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 8A TO220
Stock
36,939
In Stock :
36,939

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
80V
Number of Terminations :
3
Mounting Type :
Through Hole
Max Power Dissipation :
60W
Package / Case :
TO-220-3
Emitter Base Voltage (VEBO) :
5V
Vce Saturation (Max) @ Ib, Ic :
2V @ 12mA, 3A
Weight :
4.535924g
Height :
9.15mm
Width :
4.6mm
hFE Min :
750
Power Dissipation :
60W
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Collector Emitter Voltage (VCEO) :
80V
Continuous Collector Current :
8A
Max Collector Current :
8A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-220AB
Current - Collector Cutoff (Max) :
500μA
Transistor Application :
SWITCHING
Transition Frequency :
20MHz
Contact Plating :
Tin
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Collector Emitter Breakdown Voltage :
80V
Number of Elements :
1
Base Part Number :
BDX53
Number of Pins :
3
Transistor Type :
NPN - Darlington
Length :
10.4mm
Packaging :
Tube
Pin Count :
3
VCEsat-Max :
2 V
Polarity :
NPN
REACH SVHC :
No SVHC
ECCN Code :
EAR99
Element Configuration :
Single
Collector Emitter Saturation Voltage :
2V
Radiation Hardening :
No
Operating Temperature :
150°C TJ
Factory Lead Time :
8 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
JESD-609 Code :
e3
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Datasheets
BDX53B
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX53B from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Base Part Number:BDX53, Number of Pins:3, Operating Temperature:150°C TJ, BDX53B pinout, BDX53B datasheet PDF, BDX53B amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX53B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX53B


NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX53B Overview


DC current gain in this device equals 750 @ 3A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 12mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 20MHz.In extreme cases, the collector current can be as low as 8A volts.

BDX53B Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 20MHz


BDX53B Applications


There are a lot of STMicroelectronics
BDX53B applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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