BDX53C
- Mfr.Part #
- BDX53C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO220-3
- Stock
- 85
- In Stock :
- 85
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Junction Temperature (Tj) :
- 150°C
- Element Configuration :
- Single
- Voltage - Rated DC :
- 100V
- Length :
- 10.4mm
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Max Power Dissipation :
- 60W
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 2
- Transition Frequency :
- 20MHz
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 8A
- Continuous Collector Current :
- 8A
- JESD-30 Code :
- R-PSFM-T3
- Width :
- 4.6mm
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 500μA
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Power Dissipation :
- 60W
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tube
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Factory Lead Time :
- 8 Weeks
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 100V
- Height :
- 19.68mm
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- VCEsat-Max :
- 2 V
- Collector Emitter Saturation Voltage :
- 2V
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN - Darlington
- Mounting Type :
- Through Hole
- Polarity :
- NPN
- Pin Count :
- 3
- Current Rating :
- 8A
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Collector Emitter Breakdown Voltage :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Collector Emitter Voltage (VCEO) :
- 100V
- Base Part Number :
- BDX53
- hFE Min :
- 750
- Weight :
- 90.718474mg
- Datasheets
- BDX53C

NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX53C Description
The BDX53C is manufactured in planar base island technology with a monolithic Darlington configuration. BDX53C is an NPN transistor from the manufacturer of STMicroelectronics with a voltage of 100V. The operating temperature of BDX53C is 150°C TJ and its maximum power dissipation is 60W. BDX53C has 3 pins and it is available in TO-220-3 packaging way. Collector-Emitter Breakdown Voltage of BDX53C is 100V, Collector-Emitter Saturation Voltage is 2V, and Emitter Base Voltage (VEBO) is 5V.
BDX53C Features
-
Good for linearity
-
High fT frequency
-
Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
BDX53C Applications
-
Audio amplifiers
-
Linear and switching industrial equipment
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