BDX53A-S

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Mfr.Part #
BDX53A-S
Manufacturer
Bourns, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 60V 8A TO220
Stock
16,225
In Stock :
16,225

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Manufacturer :
Bourns, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
8A
Number of Elements :
1
Collector Emitter Breakdown Voltage :
60V
Max Operating Temperature :
150°C
Min Operating Temperature :
-65°C
Polarity :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Vce Saturation (Max) @ Ib, Ic :
2V @ 12mA, 3A
Radiation Hardening :
No
Operating Temperature :
-65°C~150°C TJ
Package / Case :
TO-220-3
Max Power Dissipation :
2W
Base Part Number :
BDX53
Power - Max :
2W
Mount :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Voltage (VCEO) :
60V
Published :
1993
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
500μA
Supplier Device Package :
TO-220
Voltage - Collector Emitter Breakdown (Max) :
60V
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
60V
Current - Collector (Ic) (Max) :
8A
Transistor Type :
NPN - Darlington
hFE Min :
750
Mounting Type :
Through Hole
Element Configuration :
Single
Collector Emitter Saturation Voltage :
2V
Datasheets
BDX53A-S
Introducing Transistors - Bipolar (BJT) - Single Bourns, Inc. BDX53A-S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3, Base Part Number:BDX53, Mounting Type:Through Hole, BDX53A-S pinout, BDX53A-S datasheet PDF, BDX53A-S amp .Beyond Transistors - Bipolar (BJT) - Single Bourns, Inc. BDX53A-S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Bourns, Inc. BDX53A-S


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements TO-220-3 Tube Through Hole

BDX53A-S Overview


In this device, the DC current gain is 750 @ 3A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2V @ 12mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Supplier device package TO-220 comes with the product.The device exhibits a collector-emitter breakdown at 60V.Maximum collector currents can be below 8A volts.

BDX53A-S Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the supplier device package of TO-220


BDX53A-S Applications


There are a lot of Bourns Inc.
BDX53A-S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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