BDX53BFP
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- Mfr.Part #
- BDX53BFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A TO220FP
- Stock
- 29
- In Stock ：
- 29
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- hFE Min :
- 750
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 29W
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Transistor Type :
- NPN - Darlington
- Collector Emitter Voltage (VCEO) :
- 80V
- Case Connection :
- Isolated
- Number of Elements :
- 1
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3 Full Pack
- Base Part Number :
- BDX53
- Collector Emitter Saturation Voltage :
- 2V
- Polarity :
- NPN
- Mounting Type :
- Through Hole
- Max Collector Current :
- 8A
- Power Dissipation :
- 29W
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- REACH SVHC :
- No SVHC
- VCEsat-Max :
- 2 V
- Current - Collector Cutoff (Max) :
- 500μA
- Datasheets
- BDX53BFP
NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Full Pack Tube Through Hole
BDX53BFP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 3A 3V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 8A volts.
BDX53BFP Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
BDX53BFP Applications
There are a lot of STMicroelectronics
BDX53BFP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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