BDX53CG
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- Mfr.Part #
- BDX53CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO220
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 10.28mm
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 750
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 7 Weeks
- Published :
- 1999
- Collector Emitter Saturation Voltage :
- 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 500μA
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Current Rating :
- 8A
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 9.28mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Base Part Number :
- BDX53
- Collector Emitter Voltage (VCEO) :
- 100V
- Width :
- 4.82mm
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Number of Terminations :
- 3
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Polarity :
- NPN
- Max Power Dissipation :
- 65W
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Transition Frequency :
- 20MHz
- JEDEC-95 Code :
- TO-220AB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Weight :
- 4.535924g
- Surface Mount :
- No
- Radiation Hardening :
- No
- Continuous Collector Current :
- 4A
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- Voltage - Rated DC :
- 100V
- Max Collector Current :
- 8A
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Power Dissipation :
- 40W
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Collector Base Voltage (VCBO) :
- 100V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Transistor Type :
- NPN - Darlington
- Datasheets
- BDX53CG
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX53CG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2V @ 12mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A transition frequency of 20MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
BDX53CG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 20MHz
BDX53CG Applications
There are a lot of ON Semiconductor
BDX53CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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