BDX53BG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

2 Weeks

Max Collector Current :

8A

Mounting Type :

Through Hole

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A 3V

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Terminal Finish :

Tin (Sn)

Base Part Number :

BDX53

Collector Base Voltage (VCBO) :

80V

Number of Pins :

3

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

80V

Lead Free :

Lead Free

Polarity :

NPN

Operating Temperature :

-65°C~150°C TJ

Number of Elements :

1

Transistor Application :

AMPLIFIER

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

65W

Surface Mount :

No

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

80V

Pbfree Code :

yes

Published :

2007

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

80V

Current Rating :

8A

Transition Frequency :

4MHz

Collector Emitter Saturation Voltage :

2V

Current - Collector Cutoff (Max) :

500μA

Transistor Type :

NPN - Darlington

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

hFE Min :

750

Package / Case :

TO-220-3

Pin Count :

3

Packaging :

Tube

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

2V @ 12mA, 3A

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Circuits :

8

Time@Peak Reflow Temperature-Max (s) :

40