BDX53C

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

20MHz

Width :

4.6mm

Mount :

Through Hole

Polarity :

NPN

Collector Base Voltage (VCBO) :

100V

Length :

10.4mm

Power Dissipation :

60W

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Transistor Type :

NPN - Darlington

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

750

VCEsat-Max :

2 V

Vce Saturation (Max) @ Ib, Ic :

2V @ 12mA, 3A

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

100V

Transistor Element Material :

SILICON

Weight :

90.718474mg

Number of Pins :

2

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3

Base Part Number :

BDX53

Factory Lead Time :

8 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A 3V

Number of Terminations :

3

Package / Case :

TO-220-3

Packaging :

Tube

Current Rating :

8A

JESD-30 Code :

R-PSFM-T3

Collector Emitter Breakdown Voltage :

100V

Lead Free :

Lead Free

Max Collector Current :

8A

Contact Plating :

Tin

Height :

19.68mm

Continuous Collector Current :

8A

Transistor Application :

SWITCHING

Radiation Hardening :

No

Pin Count :

3

Voltage - Rated DC :

100V

Operating Temperature :

150°C TJ

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

500μA

Collector Emitter Saturation Voltage :

2V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Max Power Dissipation :

60W

Element Configuration :

Single