BDX53CTU

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Mfr.Part #
BDX53CTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 8A TO220-3
Stock
3,403
In Stock :
3,403

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-220-3
Collector Emitter Voltage (VCEO) :
100V
Operating Temperature :
150°C TJ
Pbfree Code :
yes
Polarity :
NPN
Packaging :
Tube
Width :
4.7mm
Length :
10.1mm
Max Collector Current :
8A
Factory Lead Time :
6 Weeks
Voltage - Rated DC :
100V
Current Rating :
8A
Radiation Hardening :
No
hFE Min :
750
Contact Plating :
Tin
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
2V
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
100V
Transistor Application :
SWITCHING
Max Power Dissipation :
60W
Weight :
1.8g
Number of Elements :
1
Transition Frequency :
20MHz
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
100V
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
500μA
Continuous Collector Current :
8A
ECCN Code :
EAR99
JESD-609 Code :
e3
Transistor Type :
NPN - Darlington
Mount :
Through Hole
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Vce Saturation (Max) @ Ib, Ic :
2V @ 12mA, 3A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
JEDEC-95 Code :
TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Published :
2011
Height :
9.4mm
Emitter Base Voltage (VEBO) :
5V
Element Configuration :
Single
Base Part Number :
BDX53
Datasheets
BDX53CTU
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX53CTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:BDX53, BDX53CTU pinout, BDX53CTU datasheet PDF, BDX53CTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX53CTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX53CTU


NPN - Darlington 150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX53CTU Overview


This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 8A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 8A.In this part, there is a transition frequency of 20MHz.The maximum collector current is 8A volts.

BDX53CTU Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 20MHz


BDX53CTU Applications


There are a lot of ON Semiconductor
BDX53CTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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