BDX53C

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

100V

Current Rating :

8A

Vce Saturation (Max) @ Ib, Ic :

2V @ 12mA, 3A

Collector Emitter Saturation Voltage :

2V

Weight :

90.718474mg

Element Configuration :

Single

hFE Min :

750

Operating Temperature :

150°C TJ

Mount :

Through Hole

VCEsat-Max :

2 V

Package / Case :

TO-220-3

Number of Terminations :

3

Packaging :

Tube

Voltage - Rated DC :

100V

Pin Count :

3

Collector Base Voltage (VCBO) :

100V

ECCN Code :

EAR99

Transition Frequency :

20MHz

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Radiation Hardening :

No

Max Junction Temperature (Tj) :

150°C

Contact Plating :

Tin

JESD-30 Code :

R-PSFM-T3

Continuous Collector Current :

8A

Number of Elements :

1

Transistor Type :

NPN - Darlington

Current - Collector Cutoff (Max) :

500μA

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Height :

19.68mm

Collector Emitter Voltage (VCEO) :

100V

Factory Lead Time :

8 Weeks

Polarity :

NPN

Max Power Dissipation :

60W

Mounting Type :

Through Hole

Length :

10.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A 3V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Emitter Base Voltage (VEBO) :

5V

Width :

4.6mm

Transistor Element Material :

SILICON

Max Collector Current :

8A

Base Part Number :

BDX53

Number of Pins :

2

Power Dissipation :

60W