BDX54CG
- Mfr.Part #
- BDX54CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 8A TO220
- Stock
- 9
- In Stock :
- 9
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- -8A
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Weight :
- 6.000006g
- Width :
- 4.83mm
- Voltage - Rated DC :
- -100V
- Pin Count :
- 3
- Package / Case :
- TO-220-3
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 100V
- Base Part Number :
- BDX54
- Max Power Dissipation :
- 65W
- Power Dissipation :
- 65W
- Number of Pins :
- 3
- Max Collector Current :
- 8A
- Surface Mount :
- No
- Published :
- 2000
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 500μA
- JEDEC-95 Code :
- TO-220AB
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Height :
- 15.75mm
- Transistor Type :
- PNP - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 2V
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 20MHz
- hFE Min :
- 750
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Collector Emitter Breakdown Voltage :
- 100V
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Polarity :
- PNP
- Length :
- 10.53mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 100V
- Datasheets
- BDX54CG

PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX54CG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 2V @ 12mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -8A.In the part, the transition frequency is 20MHz.A maximum collector current of 8A volts can be achieved.
BDX54CG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 20MHz
BDX54CG Applications
There are a lot of ON Semiconductor
BDX54CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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