BC639RL1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

HTS Code :

8541.21.00.75

RoHS Status :

Non-RoHS Compliant

Collector Emitter Saturation Voltage :

500mV

Transition Frequency :

200MHz

Pin Count :

3

Qualification Status :

Not Qualified

Base Part Number :

BC639

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Max Power Dissipation :

625mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

JESD-609 Code :

e0

Emitter Base Voltage (VEBO) :

5V

Polarity/Channel Type :

NPN

Element Configuration :

Single

Number of Elements :

1

Additional Feature :

EUROPEAN PART NUMBER

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

240

Operating Temperature :

-55°C~150°C TJ

Current - Collector Cutoff (Max) :

100nA ICBO

Published :

2005

Lead Free :

Contains Lead

Terminal Finish :

Tin/Lead (Sn/Pb)

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

500mV

ECCN Code :

EAR99

Current Rating :

1A

Voltage - Rated DC :

80V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Collector Current :

1A

Terminal Position :

BOTTOM

hFE Min :

25

Collector Emitter Breakdown Voltage :

80V

Collector Base Voltage (VCBO) :

80V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

JESD-30 Code :

O-PBCY-T3

Transistor Type :

NPN

Max Collector Current :

1A

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Gain Bandwidth Product :

200MHz