BC635,116

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Type :

NPN

JESD-609 Code :

e3

Polarity/Channel Type :

NPN

Terminal Position :

BOTTOM

Configuration :

Single

Packaging :

Tape and Reel (TR)

Surface Mount :

No

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Base Part Number :

BC635

Number of Terminations :

3

Published :

2007

VCEsat-Max :

0.5 V

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Reach Compliance Code :

Unknown

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.21.00.75

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Current - Collector (Ic) (Max) :

1A

Power Dissipation-Max (Abs) :

0.8W

JESD-30 Code :

O-PBCY-T3

Frequency - Transition :

180MHz

Voltage - Collector Emitter Breakdown (Max) :

45V

ECCN Code :

EAR99

Transition Frequency :

180MHz

Power - Max :

830mW

Qualification Status :

Not Qualified

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA