BC635

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Mfr.Part #
BC635
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 45V 1A TO92-3
Stock
10,372
In Stock :
10,372

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
45V
Max Operating Temperature :
150°C
Power Dissipation :
1W
REACH SVHC :
No SVHC
Number of Elements :
1
Termination :
Through Hole
Polarity :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Frequency :
100MHz
Supplier Device Package :
TO-92-3
Frequency - Transition :
100MHz
Height :
5.33mm
Weight :
201mg
Element Configuration :
Single
RoHS Status :
RoHS Compliant
Published :
2002
Packaging :
Bulk
Mount :
Through Hole
Emitter Base Voltage (VEBO) :
5V
Max Frequency :
100MHz
Collector Emitter Saturation Voltage :
500mV
Base Part Number :
BC635
Gain Bandwidth Product :
100MHz
Voltage - Rated DC :
45V
Current - Collector Cutoff (Max) :
100nA ICBO
Max Collector Current :
1A
Current Rating :
1A
Length :
5.2mm
Transistor Type :
NPN
Lead Free :
Lead Free
Power - Max :
1W
Voltage - Collector Emitter Breakdown (Max) :
45V
Number of Pins :
3
Mounting Type :
Through Hole
Collector Base Voltage (VCBO) :
45V
Operating Temperature :
150°C TJ
Min Operating Temperature :
-65°C
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Collector Emitter Voltage (VCEO) :
45V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Max Power Dissipation :
1W
Width :
4.19mm
hFE Min :
40
Current - Collector (Ic) (Max) :
1A
Datasheets
BC635
Introducing Transistors - Bipolar (BJT) - Single onsemi BC635 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BC635, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA), BC635 pinout, BC635 datasheet PDF, BC635 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC635 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC635


NPN 150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

BC635 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.The product comes in the supplier device package of TO-92-3.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.Collector current can be as low as 1A volts at its maximum.

BC635 Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
the supplier device package of TO-92-3


BC635 Applications


There are a lot of ON Semiconductor
BC635 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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