BC635-16,126
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- Mfr.Part #
- BC635-16,126
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A TO92-3
- Stock
- 21,400
- In Stock ：
- 21,400
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation-Max (Abs) :
- 0.83W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Box (TB)
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 180MHz
- Configuration :
- Single
- Surface Mount :
- No
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number :
- BC635
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 100MHz
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Power - Max :
- 830mW
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 1A
- Polarity/Channel Type :
- NPN
- Published :
- 2007
- Datasheets
- BC635-16,126
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC635-16,126 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.A transition frequency of 100MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC635-16,126 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz
BC635-16,126 Applications
There are a lot of NXP USA Inc.
BC635-16,126 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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