BC635ZL1G

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Mfr.Part #
BC635ZL1G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 45V 1A TO92
Stock
40,811
In Stock :
40,811

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transition Frequency :
200MHz
Pin Count :
3
JESD-609 Code :
e1
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
RoHS Status :
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max) :
45V
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Position :
BOTTOM
Power - Max :
625mW
Reach Compliance Code :
Unknown
Frequency - Transition :
200MHz
Peak Reflow Temperature (Cel) :
260
Polarity/Channel Type :
NPN
Packaging :
Tape and Box (TB)
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Configuration :
Single
Number of Elements :
1
Additional Feature :
EUROPEAN PART NUMBER
JESD-30 Code :
O-PBCY-T3
Qualification Status :
COMMERCIAL
Surface Mount :
No
Pbfree Code :
yes
Terminal Finish :
TIN SILVER COPPER
Mounting Type :
Through Hole
Current - Collector (Ic) (Max) :
1A
Number of Terminations :
3
Transistor Type :
NPN
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Element Material :
SILICON
Datasheets
BC635ZL1G
Introducing Transistors - Bipolar (BJT) - Single onsemi BC635ZL1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, BC635ZL1G pinout, BC635ZL1G datasheet PDF, BC635ZL1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC635ZL1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC635ZL1G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

BC635ZL1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The part has a transition frequency of 200MHz.Device displays Collector Emitter Breakdown (45V maximal voltage).

BC635ZL1G Features


the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 200MHz


BC635ZL1G Applications


There are a lot of Rochester Electronics, LLC
BC635ZL1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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