BC635ZL1G
- Mfr.Part #
- BC635ZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A TO92
- Stock
- 40,811
- In Stock :
- 40,811
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 200MHz
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- BOTTOM
- Power - Max :
- 625mW
- Reach Compliance Code :
- Unknown
- Frequency - Transition :
- 200MHz
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Box (TB)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Number of Elements :
- 1
- Additional Feature :
- EUROPEAN PART NUMBER
- JESD-30 Code :
- O-PBCY-T3
- Qualification Status :
- COMMERCIAL
- Surface Mount :
- No
- Pbfree Code :
- yes
- Terminal Finish :
- TIN SILVER COPPER
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 1A
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Datasheets
- BC635ZL1G

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC635ZL1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.The part has a transition frequency of 200MHz.Device displays Collector Emitter Breakdown (45V maximal voltage).
BC635ZL1G Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 200MHz
BC635ZL1G Applications
There are a lot of Rochester Electronics, LLC
BC635ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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