BC635_L34Z
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- Mfr.Part #
- BC635_L34Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A TO92-3
- Stock
- 11,084
- In Stock ：
- 11,084
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Frequency - Transition :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Supplier Device Package :
- TO-92-3
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BC635
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Current - Collector (Ic) (Max) :
- 1A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power - Max :
- 1W
- Datasheets
- BC635_L34Z
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC635_L34Z Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 150mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.This product comes in a TO-92-3 device package from the supplier.Device displays Collector Emitter Breakdown (45V maximal voltage).
BC635_L34Z Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-92-3
BC635_L34Z Applications
There are a lot of ON Semiconductor
BC635_L34Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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