BC635_D26Z
- Mfr.Part #
- BC635_D26Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A TO92-3
- Stock
- 15,244
- In Stock :
- 15,244
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Frequency - Transition :
- 100MHz
- Base Part Number :
- BC635
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- Power - Max :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Operating Temperature :
- 150°C TJ
- Datasheets
- BC635_D26Z

NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC635_D26Z Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.There is a 45V maximal voltage in the device due to collector-emitter breakdown.
BC635_D26Z Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
BC635_D26Z Applications
There are a lot of ON Semiconductor
BC635_D26Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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