BC636

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

1W

Power - Max :

1W

Collector Base Voltage (VCBO) :

-45V

Collector Emitter Breakdown Voltage :

45V

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Base Part Number :

BC636

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

100MHz

Frequency - Transition :

100MHz

Current - Collector (Ic) (Max) :

1A

Polarity :

PNP

Min Operating Temperature :

-65°C

Number of Elements :

1

Lifecycle Status :

OBSOLETE (Last Updated: 4 days ago)

Max Power Dissipation :

1W

RoHS Status :

RoHS Compliant

Current Rating :

-1A

Current - Collector Cutoff (Max) :

100nA ICBO

Width :

6.35mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Height :

6.35mm

Mount :

Through Hole

Termination :

Through Hole

Number of Pins :

3

Packaging :

Bulk

Max Operating Temperature :

150°C

REACH SVHC :

No SVHC

Element Configuration :

Single

Length :

6.35mm

Voltage - Rated DC :

-45V

Collector Emitter Saturation Voltage :

-500mV

Lead Free :

Lead Free

Operating Temperature :

150°C TJ

Max Collector Current :

1A

hFE Min :

40

Emitter Base Voltage (VEBO) :

-5V

Gain Bandwidth Product :

100MHz

Supplier Device Package :

TO-92-3

Voltage - Collector Emitter Breakdown (Max) :

45V

Collector Emitter Voltage (VCEO) :

500mV

Weight :

201mg

Transistor Type :

PNP

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)