BC635RL1G
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- Mfr.Part #
- BC635RL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A TO92
- Stock
- 44,033
- In Stock ：
- 44,033
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BC635
- Max Collector Current :
- 1A
- Mount :
- Through Hole
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Published :
- 2005
- Transistor Element Material :
- SILICON
- Frequency :
- 200MHz
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Voltage - Rated DC :
- 45V
- Transistor Type :
- NPN
- Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 200MHz
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Current Rating :
- 1A
- hFE Min :
- 25
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Number of Elements :
- 1
- Additional Feature :
- EUROPEAN PART NUMBER
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e1
- Gain Bandwidth Product :
- 200MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Base Voltage (VCBO) :
- 45V
- Max Power Dissipation :
- 625mW
- Continuous Collector Current :
- 1A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- 500mV
- Datasheets
- BC635RL1G
BC635RL1G Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
BC635RL1G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Maintaining the continuous collector voltage at 1A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).200MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
BC635RL1G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 200MHz
BC635RL1G Applications
There are a lot of ON Semiconductor
BC635RL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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