BC638TA
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- Mfr.Part #
- BC638TA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A TO92-3
- Stock
- 1,328
- In Stock ：
- 1,328
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 4.58mm
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1W
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 1A
- Width :
- 3.86mm
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Voltage - Rated DC :
- -60V
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Current Rating :
- -1A
- Factory Lead Time :
- 6 Weeks
- Published :
- 2007
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -500mV
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Length :
- 4.58mm
- Weight :
- 240mg
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Max Breakdown Voltage :
- 60V
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Base Part Number :
- BC638
- Collector Base Voltage (VCBO) :
- -60V
- Number of Pins :
- 3
- Mount :
- Through Hole
- Power Dissipation :
- 1W
- Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- hFE Min :
- 40
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- Packaging :
- Tape and Box (TB)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC638TA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC638TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BC638TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
BC638TA Applications
There are a lot of ON Semiconductor
BC638TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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