BC637G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA 2V

Power - Max :

625mW

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Current - Collector (Ic) (Max) :

1A

Transition Frequency :

200MHz

Polarity/Channel Type :

NPN

Pin Count :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Number of Terminations :

3

Configuration :

Single

Terminal Finish :

TIN SILVER COPPER

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Peak Reflow Temperature (Cel) :

260

Packaging :

Bulk

Terminal Position :

BOTTOM

Transistor Type :

NPN

Mounting Type :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

60V

JESD-609 Code :

e1

Qualification Status :

COMMERCIAL

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-30 Code :

O-PBCY-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

200MHz

Transistor Element Material :

SILICON