BC637_J35Z
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- Mfr.Part #
- BC637_J35Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A TO92-3
- Stock
- 24,675
- In Stock ：
- 24,675
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 100MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number :
- BC637
- Operating Temperature :
- 150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Supplier Device Package :
- TO-92-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Current - Collector (Ic) (Max) :
- 1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 1W
- Datasheets
- BC637_J35Z
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
BC637_J35Z Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 60V.
BC637_J35Z Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of TO-92-3
BC637_J35Z Applications
There are a lot of ON Semiconductor
BC637_J35Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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